TK55S10N1,LQ 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: TOSHIBA TK55S10N1,LQ
- Power Dissipation (Pd): 157W
- Total Gate Charge (Qg@Vgs): 49nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 3280pF@10V
- Continuous Drain Current (Id): 55A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@500uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,27.5A
- Package: TO-252
- Manufacturer: TOSHIBA